Spin helices in GaAs quantum wells: Interplay of electron density, spin diffusion, and spin lifetime

نویسندگان

چکیده

To establish a correlation between the spin diffusion, lifetime, and electron density, we study, employing time-resolved magneto-optical Kerr effect microscopy, polarization evolution in low-dimensional GaAs semiconductors hosting two-dimensional gases. It is shown that for establishment of longest spin-lifetime, variation scattering rate with density higher importance than fulfilling persistent helix condition when Rashba $\alpha$ Dresselhaus $\beta$ parameters are balanced. More specifically, regardless linear dependencies on relaxation determined by diffusion coefficient depends nonmonotonously. The experimental spin-lifetime occurs at an corresponding to transition from Boltzmann Fermi-Dirac statistics, which several times expected. These facts highlight role may play considering applications spintronic devices.

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ژورنال

عنوان ژورنال: Journal of Applied Physics

سال: 2022

ISSN: ['1089-7550', '0021-8979', '1520-8850']

DOI: https://doi.org/10.1063/5.0097426